论文信息 - A wide range linear variable resistor by buried channel MOS/SIMOX

A wide range linear variable resistor by buried channel MOS/SIMOX

A low-distortion linear variable resistor using an offset gate buried-channel MOSFET fabricated by SIMOX technology is described. The offset gate structure on the insulating substrate provides 15 to 100 k/spl Omega/ drain-to-source resistance, and 2.5% total harmonic distortion at 100 k/spl Omega/. In a battery-feed circuit application for a subscriber-line interface circuit, the area of a variable conventional polysilicon resistor.

K. Kato | S. Nakashima | M. Akiya

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