论文信息 - Strained‐layer InGaAs quantum well lasers emitting at 1.5 μm grown by chemical beam epitaxy

Strained‐layer InGaAs quantum well lasers emitting at 1.5 μm grown by chemical beam epitaxy

Laser characteristics of double channel planar buried heterostructure lasers with InxGa1−xAs/InGaAsP multiquantum wells (MQW) fabricated by a combination of chemical beam epitaxy and liquid phase epitaxy are described for the InAs content x of the InxGa1−xAs ranging from 0.53 to 0.71. There is no discernible difference in the minority carrier lifetime of the unstrained and strained MQWs. All the lasers have almost the same threshold current of 15±1 mA. Characteristic temperature T0 is improved in the strained lasers; the laser with x=0.62 has a T0 of as high as 98 K at 900 μm cavity length. Resonance oscillation frequency fr increases with the InAs content, i.e., the amount of the compressive strain.

[1] R. D. Yadvish,et al. Metalorganic molecular beam epitaxy of 1.3 μm quaternary layers and heterostructure lasers , 1991 .

[2] R. Iga,et al. Low-Threshold InGaAs/InGaAsP Multiple Quantum Well Lasers Grown by Chemical Beam Epitaxy , 1991 .

[3] Y. Matsui,et al. High‐power 1.48 μm multiple quantum well lasers with strained quaternary wells entirely grown by metalorganic vapor phase epitaxy , 1991 .

[4] John E. Bowers,et al. Effect of strain on the resonant frequency and damping factor in InGaAs/InP multiple quantum well lasers , 1991 .

[5] Larry A. Coldren,et al. Theoretical gain in strained InGaAs/AlGaAs quantum wells including valence‐band mixing effects , 1990 .

[6] Ming C. Wu,et al. Strained-layer 1.5 mu m wavelength InGaAs/InP multiple quantum well lasers grown by chemical beam epitaxy , 1990 .

[7] S. Chu,et al. Critical layer thickness in strained Ga1−xInxAs/InP quantum wells , 1989 .

[8] L. A. Coldren,et al. Extremely wide modulation bandwidth in a low threshold current strained quantum well laser , 1988 .

[9] A. Rudra,et al. Growth of Gainas by Chemical Beam Epitaxy , 1991 .

[10] G. P. Witchlow,et al. Calculations of the threshold current and temperature sensitivity of A (GaIn)As strained quantum well laser operating at 1.55 μm , 1987 .