论文信息 - Quantitative evaluation of energy distribution of interface trap density at MoS2 MOS interfaces by the Terman method

Quantitative evaluation of energy distribution of interface trap density at MoS2 MOS interfaces by the Terman method

We have evaluated interfacial properties of exfoliated MoS<inf>2</inf> MOS interfaces with HfO<inf>2</inf>, Al<inf>2</inf>O<inf>3</inf>, and SiO<inf>2</inf> by C-V measurements of thick-body MoS<inf>2</inf> MOS capacitors. The Terman method have revealed that most of the MoS<inf>2</inf> MOS interfaces exhibit a D<inf>it</inf> peak of approximately 1×1013 cm−2eV−1 at an energy level of around 0.35–0.4 eV from the midgap regardless of the gate dielectrics, which is attributable to the sulfur vacancies of MoS2. We have also revealed that some MoS<inf>2</inf> MOS interfaces have a nearly constant D<inf>it</inf> of around 1×1012 cm−2eV−1 when there seems to be no sulfur vacancies. The analysis of the subthreshold swings in the MoS<inf>2</inf> MOSFETs and TCAD simulation support the same energy distribution of D<inf>it</inf>. Thus, we have successfully grasped the energy distribution of D<inf>it</inf> at the native MoS2 MOS interfaces which is not strongly dependent on the gate dielectrics.

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