Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition
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J. Boeckl | D. Look | G. Jessen | R. Fitch | N. Moser | A. Crespo | K. Chabak | K. Leedy | V. Vasilyev | S. Tetlak | D. Thomson | A. Green | J. McCandless | J. Brown | Jeff L. Brown