Improved design methodology for a 2 GHz class-E hybrid power amplifier using packaged GaN-HEMTs

This paper reports on design methodology and realization of a class-E power amplifier (PA) for 2 GHz using a packaged GaN-HEMT. The circuit achieves 36 dBm output power and 57% PAE, with drain efficiency as high as 62%. In addition to the large-signal simulation considerations, we discuss particularly the problem of input matching of the amplifier under class-E operation.

[1]  I. Angelov,et al.  Extensions of the Chalmers nonlinear HEMT and MESFET model , 1996 .

[2]  Herbert Zirath,et al.  An LDMOS VHF class E power amplifier using a high Q novel variable inductor , 1999, IMS 1999.

[3]  No Sokal,et al.  CLASS-E - NEW CLASS OF HIGH-EFFICIENCY TUNED SINGLE-ENDED SWITCHING POWER AMPLIFIERS , 1975 .

[4]  I. Aoki,et al.  7-MHz, 1.1-kW demonstration of the new E/F/sub 2,odd/ switching amplifier class , 2001, 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).

[5]  H. Zirath,et al.  On the large-signal modelling of AlGaN/GaN HEMTs and SiC MESFETs , 2005, European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005.

[6]  J. van der Tang,et al.  A high-efficiency HBT-based class-E power amplifier for 2 GHz , 2005, European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005.