Transmission characteristics of a coaxial through-silicon via (C-TSV) interconnect

Transmission characteristics of a coaxial through-silicon via (C-TSV) interconnect are studied according to our proposed lumped-element circuit model in this paper, with some numerical results given for their design as well as optimization. The influences of their geometrical and physical parameters involved on their transmission and reflection parameters are examined and compared in detail, such as substrate conductivity, radius of the inner cylinder and its electrical conductivity, etc. It is expected that C-TSVs are better choices than that of normal TSV interconnects for effectively suppressing electromagnetic coupling among them, with signal transmission quality improved greatly. Finally, based on our own developed algorithm, the electrothermal responses of a C-TSV interconnect injected with a trapezoidal voltage pulse are also studied, with the temperature-dependent parameters treated appropriately.

[1]  Kiat Seng Yeo,et al.  Sensitivity Analysis of Coupled Interconnects for RFIC Applications , 2006, IEEE Transactions on Electromagnetic Compatibility.

[2]  R. Suaya,et al.  Compact AC Modeling and Performance Analysis of Through-Silicon Vias in 3-D ICs , 2010, IEEE Transactions on Electron Devices.

[3]  Rao Tummala,et al.  Electrical modeling of annular and co-axial TSVs considering MOS capacitance effects , 2009, 2009 IEEE 18th Conference on Electrical Performance of Electronic Packaging and Systems.

[4]  Qing Huo Liu,et al.  Transient Electrothermal Analysis of Multilevel Interconnects in the Presence of ESD Pulses Using the Nonlinear Time-Domain Finite-Element Method , 2009, IEEE Transactions on Electromagnetic Compatibility.

[5]  Mitsumasa Koyanagi,et al.  High-Density Through Silicon Vias for 3-D LSIs , 2009, Proceedings of the IEEE.

[6]  Wen-Yan Yin,et al.  Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs , 2010, 2010 IEEE Electrical Design of Advanced Package & Systems Symposium.

[7]  W. Dehaene,et al.  Electrical Modeling and Characterization of Through Silicon via for Three-Dimensional ICs , 2010, IEEE Transactions on Electron Devices.

[8]  H. Reichl,et al.  Managing Losses in Through Silicon Vias with Different Return Current Path Configurations , 2008, 2008 10th Electronics Packaging Technology Conference.

[9]  Kiat Seng Yeo,et al.  Sensitivity of on-wafer interconnects to CMOS process parameters at radio frequency , 2006, 2006 17th International Zurich Symposium on Electromagnetic Compatibility.

[10]  Yung-Ping Loh.  Shielding Theory of Coaxial Cylindrical Structures , 1968 .

[11]  Soha Hassoun,et al.  Power Delivery Design for 3-D ICs Using Different Through-Silicon Via (TSV) Technologies , 2011, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.

[12]  Jun-Fa Mao,et al.  Thermal Transient Response of GaAs FETs Under Intentional Electromagnetic Interference (IEMI) , 2008, IEEE Transactions on Electromagnetic Compatibility.

[13]  Makoto Motoyoshi,et al.  Through-Silicon Via (TSV) , 2009, Proceedings of the IEEE.

[14]  Sailing He,et al.  Multiphysics Characterization of Transient Electrothermomechanical Responses of Through-Silicon Vias Applied With a Periodic Voltage Pulse , 2010, IEEE Transactions on Electron Devices.