A high temperature, 12-bit-time-domain sensor interface based on injection locked oscillator

A novel resistive sensor interface for high temperature applications is presented. It is based on a time domain architecture using Injection Locked Oscillators as phase shifters that results in higher temperature hardness and simpler circuits. The system depends on the relative accuracy instead of its absolute properties and doesn't suffer from temperature variations. The proposed circuit is designed using 0.18 μm partially depleted silicon on insulator technology. Simulations have shown a maximum variation of the output lower than ±0.5%, over a temperature ranging from −40°C to 250°C.

[1]  T. Asai,et al.  A 46-ppm/°C temperature and process compensated current reference with on-chip threshold voltage monitoring circuit , 2008, 2008 IEEE Asian Solid-State Circuits Conference.

[2]  Vamsy P. Chodavarapu,et al.  Differential Wide Temperature Range CMOS Interface Circuit for Capacitive MEMS Pressure Sensors , 2015, Sensors.

[3]  R. Adler A Study of Locking Phenomena in Oscillators , 1946, Proceedings of the IRE.

[4]  F. Shoucair Design Consideration in High Temperature Analog CMOS Integrated Circuits , 1986 .

[5]  Jean-Paul Bardyn,et al.  A High Temperature Micropower Capacitive Pressure Sensor Interface Circuit , 1997 .

[6]  D. Flandre,et al.  High-temperature analog instrumentation system in thin-film fully-depleted SOI CMOS technology , 1998, 1998 Fourth International High Temperature Electronics Conference. HITEC (Cat. No.98EX145).

[7]  B. Courtois,et al.  ALC crystal oscillator based pressure and temperature integrated measurement system for high temperature oil well applications , 1999, Proceedings of the 1999 Joint Meeting of the European Frequency and Time Forum and the IEEE International Frequency Control Symposium (Cat. No.99CH36313).

[8]  B. Courtois,et al.  ALC crystal oscillators based pressure and temperature measurement integrated circuit for high temperature oil well applications , 2000, IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control.

[9]  Georges Gielen,et al.  A Novel, Highly Linear, Voltage and Temperature Independent Sensor Interface using Pulse Width Modulation☆ , 2012 .

[10]  Vamsy P. Chodavarapu,et al.  Design of a CMOS readout circuit for wide-temperature range capacitive MEMS sensors , 2014, Fifteenth International Symposium on Quality Electronic Design.