论文信息 - Comments on the thermoelectric properties of pressure‐sintered Si0.8Ge0.2 thermoelectric alloys

Comments on the thermoelectric properties of pressure‐sintered Si0.8Ge0.2 thermoelectric alloys

The recent results of C. B. Vining, W. Laskow, J. O. Hanson, R. R. Van der Beck, and P. D. Gorsuch [J. Appl. Phys. 69, 4333 (1991)] regarding the effect of grain size on the thermoelectric figure of merit of heavily doped p‐type silicon germanium alloys are compared to earlier results on similar materials. The data confirm that the room‐temperature figure‐of‐merit is significantly increased in materials with a small grain size.

D. Rowe | L. Fu | S. G. Williams

[1] Moayyed A. Hussain,et al. The maximum possible conversion efficiency of silicon‐germanium thermoelectric generators , 1991 .

[2] Cronin B. Vining,et al. Thermoelectric properties of pressure-sintered Si0.8Ge0.2 thermoelectric alloys , 1991 .

[3] J. Murota,et al. Electrical characteristics of heavily arsenic and phosphorus doped polycrystalline silicon , 1982 .

[4] D. M. Rowe,et al. The effect of phonon‐grain boundary scattering on the lattice thermal conductivity and thermoelectric conversion efficiency of heavily doped fine‐grained, hot‐pressed silicon germanium alloy , 1981 .

[5] N Savvides,et al. Precipitation of phosphorus from solid solutions in Si-Ge alloys and its effect on thermoelectric transport properties , 1981 .

[6] D. M. Rowe,et al. Phonon scattering at grain boundaries in heavily doped fine-grained silicon–germanium alloys , 1981, Nature.

[7] H. Goldsmid,et al. Boundary scattering of phonons in fine-grained hot-pressed Ge-Si alloys. I. The dependence of lattice thermal conductivity on grain size and porosity , 1980 .

[8] H. R. Meddins,et al. The thermal and thermoelectric properties of sintered germanium-silicon alloys , 1976 .

[9] E. F. Steigmeier,et al. Thermal and Electrical Properties of Heavily Doped Ge‐Si Alloys up to 1300°K , 1964 .