论文信息 - Preparation and Thermoelectric Properties of Bi-Doped Mg2Si0.8Sn0.2 Compound

Preparation and Thermoelectric Properties of Bi-Doped Mg2Si0.8Sn0.2 Compound

The Bi-doped Mg2Si0:8Sn0:2 single phase compound is prepared by a solid state reaction (SSR)-spark plasma sintering (SPS) method. The effect of the Bi content on the thermoelectric properties of the Bi-doped Mg2Si0:8Sn0:2 compound is mainly investigated. The results show that the thermoelectric properties of the obtained samples are sensitive to the Bi content. With the increase in Bi content, the electrical conductivity (� ) and Seebeck coefficient (� ) of the samples are increased, while the thermal conductivity (� ) is decreased slightly between 300 K and 850 K. When the Bi content is greater than 3.0 at%, the sample shows a maximum figure of merit (ZT) value (1:17 � 0:05) at 850 K. [doi:10.2320/matertrans.MC200908]

[1] Q. Shen,et al. Fabrication and thermoelectric properties of Mg2Si1−xSnx (0 ≤ x ≤ 1.0) solid solutions by solid state reaction and spark plasma sintering , 2009 .

[2] J. Tani,et al. Thermoelectric properties of Al-doped Mg2Si1−xSnx (x ≦ 0.1) , 2008 .

[3] J. Tani,et al. First-principles and experimental studies of impurity doping into Mg2Si , 2008 .

[4] X. Zhao,et al. Preparation and thermoelectric properties of Mg2Si1−xSnx , 2007 .

[5] T. Aizawa,et al. Synthesis of Mg2Si1−xSnx solid solutions as thermoelectric materials by bulk mechanical alloying and hot pressing , 2007 .

[6] E. A. Gurieva,et al. Highly effective Mg 2 Si 1 − x Sn x thermoelectrics , 2006 .

[7] J. Tani,et al. Thermoelectric Properties of P-doped Mg2Si Semiconductors , 2005 .

[8] E. A. Gurieva,et al. Highly effective Mg2Si1- xSnx thermoelectrics , 2006 .