论文信息 - Comparison of BC and MD simulations of low-energy ion implantation

Comparison of BC and MD simulations of low-energy ion implantation

Abstract The range of applicability of the binary collision (BC) code Crystal-TRIM is studied by comparing with full molecular dynamics (MD) simulations. Range profiles and intersections of projectile trajectories with lattice planes are calculated for 250, 500 and 1000 eV silicon implantation into silicon, into axial channeling and “random” directions. Similar physical conditions are used for BC and MD simulations. It is shown that half of the differences between results of BC and MD calculations can be attributed to target-target interactions whereas the remainder is due to the BC approximation.

M. Posselt | K.-H. Heinig

[1] Computer Simulation of Channeling Effects in Ion Implantation , 1992 .

[2] Weber,et al. Computer simulation of local order in condensed phases of silicon. , 1985, Physical review. B, Condensed matter.

[3] J. Ziegler,et al. stopping and range of ions in solids , 1985 .

[4] Formation of Double-Height Si(001) Steps by Sputtering with Xe Ions - A Computer Simulation , 1993 .

[5] M. Caturla,et al. Bulk atomic relocation in low-energy collision cascades in silicon: Molecular Dynamics versus Monte Carlo simulations , 1994 .

[6] Collision cascades in Cu, Au and Cu3Au: a comparison between molecular dynamics and the binary collision approximation , 1994 .

[7] M. Posselt,et al. Crystal-trim and its application to investigations on channeling effects during ion implantation , 1994 .

[8] A. Dvurechenskii,et al. Modelling of layer-by-layer sputtering of Si(111) surfaces under irradiation with low-energy ions , 1994 .