Growth and Properties of Quaternary Alloy Magnetic Semiconductor (InGaMn)As

We have studied the growth and properties of quaternary alloy magnetic semiconductor (InGaMn)As grown on both GaAs substrates and InP substrates by low-temperature molecular-beam epitaxy (LT-MBE). (InGaMn)As thin films were ferromagnetic below ∼ 30 K, exhibiting a strong magneto-optical effect. The lattice constant of [(InyGa1-y)1-xMnx]As, whose Mn concentration x is below 4%, is slightly smaller than that of InyGa1-yAs with the same In/Ga content ratio. We have also obtained very smooth surface morphology of nearly lattice-matched (InGaMn)As thin films grown on InP substrates, which is important for application to thin-film-type magneto-optical devices integrated with III–V opto-electronics.