Present status of HEMT LSI technology

Abstract The HEMT is a very promising device for ultra-high-speed LSI/VLSI applications because of the high-mobility GaAs/AlGaAs heterojunction structure. The present status of LSI circuit implementations for high-speed scientific computing system are reviewed, focusing on both HEMT and inverted-type HEMT structures in the submicrometer-dimensional range. A 1.1-Kgate HEMT bus driver logic LSI has been developed to demonstrate high-speed data transfer in a highly parallel processing system at room temperature. A cryogenic 3.3-Kgate HEMT random number generator logic LSI with maximum clock frequency of 1.6 GHz has also been developed to demonstrate high-clock-rate system operations at liquid nitrogen temperature. An inverted-HEMT 8-bit digital-to-analog converter with maximum clock frequency of 1.2 GHz has been developed to demonstrate high-speed high-resolution graphics operations at room temperature.

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