论文信息 - Optical pumping spectra for InxGa1-xN/GaN multiple-quantum-well structures with indium content x>0.35

Optical pumping spectra for InxGa1-xN/GaN multiple-quantum-well structures with indium content x>0.35

Photoluminescence (PL) measurement and optical pumping at 25K were studied for high-indium-composition InGaN/GaN multiple quantum well (MQW) structures grown by low-pressure metalorganic chemical vapor deposition. The result show that thermal annealing can reduce the compositional fluctuation of indium content. The optical pumping spectra show 5 stimulated emission (SE) peaks. This phenomenon might be attributed to intersubband transition. The transition between quantized levels for each peak was precisely identified by solving the time-independent Schrodinger equation and finite-difference method. The ratio of conduction- band discontinuities to the valence-band discontinuities of InGaN/GaN QW, (delta) Ec:(delta) Ev=38:62, can be obtained.

Chii-Chang Chen | Hui-Wen Chuang | Gou-Chung Chi | Jen-Inn Chyi | Chang-Cheng Chuo

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