122 Mb High Speed SRAM Cell with 25 nm Gate Length Multi-Bridge-Channel MOSFET (MBCFET) on Bulk Si Substrate

As a part of continued multi-bridge-channel MOSFET (MBCFET) study, we have successfully fabricated 122Mb SRAM cell with 25 nm gate length CMOS MBCFET on bulk Si wafers. The 6-T MBCFET SRAM cell shows high static noise margin (SNM) of 320 mV at Vcc= 0.8 V. Using tall-embedded-gate (TEG) and source/drain (S/D) engineering, 2.6times105 times on/off current ratio and 3.46 mA/mum of on-state current at 13 nA/um of off-state current were achieved. In addition, triple-bridge-channel MOSFET (TBCFET) is made for the first time and compared with single-bridge-channel MOSFET (SBCFET) and MBCFET