AM and FM quantum noise in semiconductor lasers - Part II: Comparison of theoretical and experimental results for AlGaAs lasers

Four different theoretical formulations for AM and FM quantum noise properties in semiconductor lasers are compared with each other for AlGaAs lasers. These formulations are based on van der Pol, Fokker-Planck, rate, and photon density matrix equations. Experimental results with AM noise spectra, FM noise spectra, and spectral linewidths for four different types of AlGaAs lasers are also delineated and compared with the theoretical predictions. The spontaneous emission coefficient β and population inversion parameter nsp, which are basic parameters for determining the quantum noise properties of semiconductor lasers, were calculated by the density of states with Kane function interpolated to Halperin-Lax bandtail and the Stern's improved matrix element. Experimental AM and FM quantum noise properties show good agreement with the theoretical predictions derived through use of estimated β and nspvalues.

[1]  T. Paoli.  Noise characteristics of stripe-geometry double-heterostructure junction lasers operating continuously - I. Intensity noise at room temperature , 1975, IEEE Journal of Quantum Electronics.

[2]  Yoshihisa Yamamoto,et al.  Direct frequency modulation in AlGaAs semiconductor lasers , 1982 .

[3]  J. Armstrong,et al.  Intensity Fluctuations in GaAs Laser Emission , 1965 .

[4]  K. Iga,et al.  Linewidth Measurement of a Single Longitudinal Mode AlGaAs Laser with a Fabry-Perot Interferometer , 1980 .

[5]  E. Hinkley,et al.  Direct Observation of the Lorentzian Line Shape as Limited by Quantum Phase Noise in a Laser above Threshold , 1969 .

[6]  Yoshihisa Yamamoto,et al.  Direct observation of Lorentzian lineshape of semiconductor laser and linewidth reduction with external grating feedback , 1981 .

[7]  R. O. Miles,et al.  Spectral Characteristics of Semiconductor Lasers with Optical Feedback , 1982 .

[8]  Y. Yamamoto,et al.  Oscillation center frequency tuning, quantum FM noise, and direct frequency characteristics in external grating loaded semiconductor lasers , 1982 .

[9]  Tatsuya Kimura,et al.  Gain and saturation power of resonant AlGaAs laser amplifier , 1980 .

[10]  K. Kikuchi,et al.  Novel method for high resolution measurement of laser output spectrum , 1980 .

[11]  Y. Mizushima,et al.  Silicon avalanche photodiodes with low multiplication noise and high-speed response , 1976, IEEE Transactions on Electron Devices.

[12]  S. Saito,et al.  Optical FSK heterodyne detection experiments using semiconductor laser transmitter and local oscillator , 1981 .

[13]  M. Ito,et al.  Direct Frequency Modulation In AlGaAs Semiconductor Lasers , 1982 .

[14]  Takaaki Mukai,et al.  Gain, frequency bandwidth, and saturation output power of AlGaAs DH laser amplifiers , 1981 .

[15]  J. Armstrong,et al.  Laser Photon Counting Distributions Near Threshold , 1966 .

[16]  H. Casey,et al.  Concentration‐dependent absorption and spontaneous emission of heavily doped GaAs , 1976 .

[17]  Takaaki Mukai,et al.  Noise in an AlGaAs Semiconductor Laser Amplifier , 1982 .

[18]  Charles Howard Henry,et al.  Spectral dependence of the change in refractive index due to carrier injection in GaAs lasers , 1981 .

[19]  Yusaku Yamamoto,et al.  Quantum phase noise and linewidth of a semiconductor laser , 1981 .

[20]  R. Mcintyre.  Multiplication noise in uniform avalanche diodes , 1966 .

[21]  Y. Yamamoto.  AM and FM quantum noise in semiconductor lasers - Part I: Theoretical analysis , 1983, IEEE Journal of Quantum Electronics.

[22]  C. Henry.  Theory of the linewidth of semiconductor lasers , 1982 .

[23]  Susumu Machida,et al.  Interference of an AlGaAs laser diode using a 4.15 km single mode fiber cable , 1979 .