论文信息 - 1/f noise in hot-carrier damaged MOSFET's: effects of oxide charge and interface traps

1/f noise in hot-carrier damaged MOSFET's: effects of oxide charge and interface traps

The 1/f noise in the drain current of hot-carrier damaged MOSFETs biased in weak inversion has been studied. By the use of a biased annealing treatment to simultaneously decrease the density of oxide trapped charge (N/sub ot/) and increase the density of interface traps (D/sub it/), the authors have separated the contributions of these two kinds of defects. The results clearly indicate that, while the low-frequency 1/f noise is correlated with N/sub ot/, the high-frequency 1/f noise is correlated with D/sub it/.<<ETX>>

T.-P. Ma | M.-H. Tsai

[1] Hirotaka Muto,et al. Random telegraph signals in small MOSFETs after X-ray irradiation , 1991 .

[2] Tso-Ping Ma,et al. Random telegraph signals arising from fast interface states in metal‐SiO2‐Si transistors , 1992 .

[3] W. Chen,et al. A new technique for measuring lateral distribution of oxide charge and interface traps near MOSFET junctions , 1991, IEEE Electron Device Letters.

[4] J.R. Schwank,et al. Latent thermally activated interface-trap generation in MOS devices , 1992, IEEE Electron Device Letters.

[5] Scofield,et al. Evidence that similar point defects cause 1/f noise and radiation-induced-hole trapping in metal-oxide-semiconductor transistors. , 1990, Physical review letters.

[6] F. H. Hielscher,et al. Evidence of the Surface Origin of the 1f Noise , 1966 .

[7] M. J. Kirton,et al. Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise , 1989 .

[8] Daniel M. Fleetwood,et al. 1/f noise in n- and p-channel MOS devices through irradiation and annealing , 1991 .

[9] B. J. Mrstik,et al. Si-SiO/sub 2/ interface state generation during X-ray irradiation and during post-irradiation exposure to a hydrogen ambient (MOSFET) , 1991 .