论文信息 - InP-based VCSELs with Buried Tunnel Junction for Optical Communication and Sensing in the 1.3-2.3 μm Wavelength Range

InP-based VCSELs with Buried Tunnel Junction for Optical Communication and Sensing in the 1.3-2.3 μm Wavelength Range

In this paper, we present recent progress on high-performance InP-based long-wavelength VCSELs such as 1.3 or 1.55 mum incorporating a buried tunnel junction (BTJ) for applications in optical communication and sensing

[1] A. Syrbu,et al. 1.5-mW single-mode operation of wafer-fused 1550-nm VCSELs , 2004, IEEE Photonics Technology Letters.

[2] C. Caneau,et al. 10-Gb/s error-free transmission under optical reflection using isolator-free 1.3- /spl mu/m InP-based vertical-cavity surface-emitting lasers , 2005, IEEE Photonics Technology Letters.

[3] M. Amann,et al. 2.5-mW single-mode operation of 1.55-/spl mu/m buried tunnel junction VCSELs , 2005, IEEE Photonics Technology Letters.