Understanding EUV resist mottling leading to better resolution and linewidth roughness
暂无分享,去创建一个
James Cameron | Paul LaBeaume | Suzanne Coley | John Biafore | Vipul Jain | Owendi Ongayi | Jun Sung Chun | James Thackeray | Mike Wagner
[1] Atsushi Sekiguchi. Study of the simulation parameter for EUVL , 2009, Advanced Lithography.
[2] Chris A. Mack,et al. Resist metrology for lithography simulation, part 2: development parameter measurements , 1996, Advanced Lithography.
[3] S. Tagawa,et al. Radiation Chemistry in Chemically Amplified Resists , 2010 .
[4] Harry J. Levinson,et al. Characterization of photo-acid redeposition in 193-nm photoresists , 2007, SPIE Advanced Lithography.
[5] Chris A. Mack,et al. Defining and measuring development rates for a stochastic resist: a simulation study , 2013 .
[6] J. Thackeray. Materials challenges for sub-20-nm lithography , 2011 .
[7] David Van Steenwinckel,et al. Lithographic importance of acid diffusion in chemically amplified resists , 2005, SPIE Advanced Lithography.
[8] C. Mack,et al. Stochastic exposure kinetics of extreme ultraviolet photoresists: simulation study , 2011 .
[9] Su-Jin Kang,et al. Impact of polymerization process on OOB on lithographic performance of a EUV resist , 2011, Advanced Lithography.
[10] Mark D. Smith,et al. The lithographic impact of resist model parameters , 2004, SPIE Advanced Lithography.