A new backscattering model giving a description of the quasi-ballistic transport in nano-MOSFET
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T. Skotnicki | S. Barraud | P. Dollfus | H. Jaouen | G. Le Carval | F. Salvetti | D. Villanueva | P. Dollfus | S. Barraud | F. Salvetti | H. Jaouen | T. Skotnicki | G. Le Carval | E. Fuchs | D. Villanueva | E. Fuchs
[1] T. Skotnicki,et al. The voltage-doping transformation: a new approach to the modeling of MOSFET short-channel effects , 1988, IEEE Electron Device Letters.
[2] M. Lundstrom,et al. A compact scattering model for the nanoscale double-gate MOSFET , 2002 .
[3] G. Baccarani,et al. A compact double-gate MOSFET model comprising quantum-mechanical and nonstatic effects , 1999 .
[4] J. Woo,et al. Advanced model and analysis of series resistance for CMOS scaling into nanometer regime. I. Theoretical derivation , 2002 .
[5] Mark S. Lundstrom. Elementary scattering theory of the Si MOSFET , 1997, IEEE Electron Device Letters.
[6] P. Dollfus,et al. Short-range and long-range Coulomb interactions for 3D Monte Carlo device simulation with discrete impurity distribution , 2002 .
[7] M. Lundstrom. Fundamentals of carrier transport , 1990 .
[8] M. Lundstrom,et al. Essential physics of carrier transport in nanoscale MOSFETs , 2002 .
[9] Kenji Taniguchi,et al. Analytical device model for submicrometer MOSFET's , 1991 .
[10] Jason C. S. Woo,et al. Advanced Model and Analysis of Series Resistance for CMOS Scaling Into Nanometer Regime—Part I: , 2002 .
[11] K. Natori,et al. Ballistic MOSFET reproduces current-voltage characteristics of an experimental device , 2002, IEEE Electron Device Letters.
[12] M. Anantram,et al. Role of scattering in nanotransistors , 2002, cond-mat/0211069.
[13] Velocity distribution of electrons along the channel of nanoscale MOS transistors , 2003, ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003..
[14] P. Dollfus. Si/Si1−xGex heterostructures: Electron transport and field-effect transistor operation using Monte Carlo simulation , 1997 .
[15] P. Dollfus,et al. On the ballistic transport in nanometer-scaled DG MOSFETs , 2003, IEEE Transactions on Electron Devices.
[16] M. Lundstrom,et al. A Landauer Approach to Nanoscale MOSFETs , 2002 .
[17] A New Backscattering Model for Nano-MOSFET Compact Modeling , 2004 .
[18] Siegfried Selberherr,et al. Advanced Transport Models for Sub-Micrometer Devices , 2004 .
[19] M. Stettler,et al. A critical examination of the assumptions underlying macroscopic transport equations for silicon devices , 1993 .
[20] Chih-Sheng Chang,et al. Temperature dependent channel backscattering coefficients in nanoscale MOSFETs , 2002, Digest. International Electron Devices Meeting,.
[21] Hei Wong,et al. Approximation of the length of velocity saturation region in MOSFET's , 1997 .