Inversion of absorption anisotropy and bowing of crystal field splitting in wurtzite MgZnO
暂无分享,去创建一个
Martin Feneberg | Rüdiger Goldhahn | Jean-Michel Chauveau | Norbert Esser | N. Esser | J. Chauveau | M. Feneberg | R. Goldhahn | M. Neumann | Maciej D. Neumann
[1] M. Stutzmann,et al. Growth study of nonpolar Zn1−xMgxO epitaxial films on a-plane bulk ZnO by plasma-assisted molecular beam epitaxy , 2012 .
[2] M. Stutzmann,et al. Accurate determination of optical bandgap and lattice parameters of Zn1–xMgxO epitaxial films (0≤x≤0.3) grown by plasma-assisted molecular beam epitaxy on a-plane sapphire , 2013 .
[3] Liu Yaoping,et al. Solar-blind 4.55 eV band gap Mg0.55Zn0.45O components fabricated using quasi-homo buffers , 2009 .
[4] Low temperature reflectivity study of nonpolar ZnO/(Zn,Mg)O quantum wells grown on M-plane ZnO substrates , 2011, 1101.1733.
[5] Aron Walsh,et al. Electronic Structure and Phase Stability of MgO, ZnO, CdO, and Related Ternary Alloys , 2008 .
[6] N. Esser,et al. Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to 10 20 cm − 3 , 2014 .
[7] M. Teisseire,et al. Benefits of homoepitaxy on the properties of nonpolar (Zn,Mg)O/ZnO quantum wells on a-plane ZnO substrates , 2010 .
[8] O. Dulub,et al. Surface and Interface Properties of Metal-Organic Chemical Vapor Deposition Grown a-Plane MgxZn1–xO (0 ≤ x ≤ 0.3) Films , 2007 .
[9] M. Stutzmann,et al. Optical properties and structural characteristics of ZnMgO grown by plasma assisted molecular beam epitaxy , 2009 .
[10] D. A. G. Bruggeman. Berechnung verschiedener physikalischer Konstanten von heterogenen Substanzen. I. Dielektrizitätskonstanten und Leitfähigkeiten der Mischkörper aus isotropen Substanzen , 1935 .
[11] M. Stutzmann,et al. ZnO/(ZnMg)O single quantum wells with high Mg content graded barriers , 2012 .
[12] W. L. Wang,et al. Optical characteristics of a-plane ZnO/Zn0.8Mg0.2O multiple quantum wells grown by pulsed laser deposition , 2010 .
[13] T. Makino,et al. Optical properties of excitons in ZnO-based quantum well heterostructures , 2004 .
[14] Young Ran Park,et al. Spectroscopic ellipsometry study of Zn1−xMgxO thin films deposited on Al2O3(0001) , 2000 .
[15] W. Y. Liang,et al. Transmission Spectra of ZnO Single Crystals , 1968 .
[16] M. Eickhoff,et al. Optical properties of MgZnO alloys: Excitons and exciton-phonon complexes , 2011 .
[17] G. Yi,et al. Ellipsometry on uniaxial ZnO and Zn1−xMgxO thin films grown on (0001) sapphire substrate , 2004 .
[18] O. Ambacher,et al. Anisotropy of the momentum matrix element, dichroism, and conduction-band dispersion relation of wurtzite semiconductors , 2008 .
[19] W. Fan,et al. Electronic structures of wurtzite ZnO, BeO, MgO and p-type doping in Zn1−xYxO (Y = Mg, Be) , 2008 .
[20] M. Scheffler,et al. Strain effects and band parameters in MgO, ZnO, and CdO , 2012 .
[21] F. Bechstedt,et al. Band‐structure and optical‐transition parameters of wurtzite MgO, ZnO, and CdO from quasiparticle calculations , 2009 .
[22] J. Brault,et al. Built-in electric field in ZnO based semipolar quantum wells grown on (101¯2) ZnO substrates , 2013 .
[23] M. Grundmann,et al. Exciton–phonon coupling and exciton thermalization in MgxZn1−xO thin films , 2008 .
[24] M. R. Wagner,et al. Γ 7 valence band symmetry related hole fine splitting of bound excitons in ZnO observed in magneto-optical studies , 2009 .
[25] Rüdiger Goldhahn,et al. Dielectric Function of Nitride Semiconductors: Recent Experimental Results , 2003 .
[26] R. J. Elliott,et al. Intensity of Optical Absorption by Excitons , 1957 .
[27] Gyu-Chul Yi,et al. Metalorganic vapor-phase epitaxial growth and photoluminescent properties of Zn1−xMgxO(0⩽x⩽0.49) thin films , 2001 .
[28] M. Eickhoff,et al. Contactless electroreflectance studies of free exciton binding energy in Zn1-xMgxO epilayers , 2013 .
[29] J. Chauveau,et al. Single phase a-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents , 2012 .
[30] Marius Grundmann,et al. Dielectric functions (1 to 5 eV) of wurtzite MgXZn1 -XO (x≤0.29) thin films , 2003 .
[31] Conduction band parameters of ZnO , 2006 .
[32] H. Morkoç,et al. A COMPREHENSIVE REVIEW OF ZNO MATERIALS AND DEVICES , 2005 .
[33] A. K. Sharma,et al. Refractive indices and absorption coefficients of MgxZn1−xO alloys , 2000 .
[34] J. Wrzesinski,et al. Two-photon and three-photon spectroscopy of ZnO under uniaxial stress , 1997 .
[35] C. Klingshirn,et al. ZnO: From basics towards applications , 2007 .
[36] Akira Ohtomo,et al. MgxZn1−xO as a II–VI widegap semiconductor alloy , 1998 .
[37] UV VUV spectroscopic ellipsometry of ternary MgxZn1-xO (0≤x≤0.53) thin films , 2004 .
[38] H. Osada,et al. Optical characterization by variable angle spectroscopic ellipsometry of nitrogen-doped MgxZn1 − xO thin films prepared by the plasma-assisted reactive evaporation method , 2014 .
[39] J. Chauveau,et al. Non-polar a-plane ZnMgO/ZnO quantum wells grown by molecular beam epitaxy , 2008 .
[40] Shun Lien Chuang,et al. k.p method for strained wurtzite semiconductors , 1996 .