Inversion of absorption anisotropy and bowing of crystal field splitting in wurtzite MgZnO

The anisotropic optical properties of wurtzite MgxZn1−xO thin films (0≤x≤0.45) grown on m-plane ZnO substrates by plasma assisted molecular beam epitaxy are studied using spectroscopic ellipsometry at room temperature. The data analysis provides the dielectric functions for electric field polarizations perpendicular and parallel to the optical axis. The splitting between the absorption edges of the two polarization directions decreases between x = 0 and x = 0.24, while an inverted absorption anisotropy is found at higher Mg content, indicating a sign change of the crystal field splitting Δcr as for the spin orbit parameter. The characteristic energies such as exciton binding energies and band gaps are determined from the analysis of the imaginary parts of the dielectric functions. In particular, these data reveal a bowing parameter of b=−283 meV for describing the compositional dependence of the crystal field splitting and indicate Δcr=−327 meV for wurtzite MgO. The inverted valence band ordering of ZnO (...

[1]  M. Stutzmann,et al.  Growth study of nonpolar Zn1−xMgxO epitaxial films on a-plane bulk ZnO by plasma-assisted molecular beam epitaxy , 2012 .

[2]  M. Stutzmann,et al.  Accurate determination of optical bandgap and lattice parameters of Zn1–xMgxO epitaxial films (0≤x≤0.3) grown by plasma-assisted molecular beam epitaxy on a-plane sapphire , 2013 .

[3]  Liu Yaoping,et al.  Solar-blind 4.55 eV band gap Mg0.55Zn0.45O components fabricated using quasi-homo buffers , 2009 .

[4]  Low temperature reflectivity study of nonpolar ZnO/(Zn,Mg)O quantum wells grown on M-plane ZnO substrates , 2011, 1101.1733.

[5]  Aron Walsh,et al.  Electronic Structure and Phase Stability of MgO, ZnO, CdO, and Related Ternary Alloys , 2008 .

[6]  N. Esser,et al.  Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to 10 20 cm − 3 , 2014 .

[7]  M. Teisseire,et al.  Benefits of homoepitaxy on the properties of nonpolar (Zn,Mg)O/ZnO quantum wells on a-plane ZnO substrates , 2010 .

[8]  O. Dulub,et al.  Surface and Interface Properties of Metal-Organic Chemical Vapor Deposition Grown a-Plane MgxZn1–xO (0 ≤ x ≤ 0.3) Films , 2007 .

[9]  M. Stutzmann,et al.  Optical properties and structural characteristics of ZnMgO grown by plasma assisted molecular beam epitaxy , 2009 .

[10]  D. A. G. Bruggeman Berechnung verschiedener physikalischer Konstanten von heterogenen Substanzen. I. Dielektrizitätskonstanten und Leitfähigkeiten der Mischkörper aus isotropen Substanzen , 1935 .

[11]  M. Stutzmann,et al.  ZnO/(ZnMg)O single quantum wells with high Mg content graded barriers , 2012 .

[12]  W. L. Wang,et al.  Optical characteristics of a-plane ZnO/Zn0.8Mg0.2O multiple quantum wells grown by pulsed laser deposition , 2010 .

[13]  T. Makino,et al.  Optical properties of excitons in ZnO-based quantum well heterostructures , 2004 .

[14]  Young Ran Park,et al.  Spectroscopic ellipsometry study of Zn1−xMgxO thin films deposited on Al2O3(0001) , 2000 .

[15]  W. Y. Liang,et al.  Transmission Spectra of ZnO Single Crystals , 1968 .

[16]  M. Eickhoff,et al.  Optical properties of MgZnO alloys: Excitons and exciton-phonon complexes , 2011 .

[17]  G. Yi,et al.  Ellipsometry on uniaxial ZnO and Zn1−xMgxO thin films grown on (0001) sapphire substrate , 2004 .

[18]  O. Ambacher,et al.  Anisotropy of the momentum matrix element, dichroism, and conduction-band dispersion relation of wurtzite semiconductors , 2008 .

[19]  W. Fan,et al.  Electronic structures of wurtzite ZnO, BeO, MgO and p-type doping in Zn1−xYxO (Y = Mg, Be) , 2008 .

[20]  M. Scheffler,et al.  Strain effects and band parameters in MgO, ZnO, and CdO , 2012 .

[21]  F. Bechstedt,et al.  Band‐structure and optical‐transition parameters of wurtzite MgO, ZnO, and CdO from quasiparticle calculations , 2009 .

[22]  J. Brault,et al.  Built-in electric field in ZnO based semipolar quantum wells grown on (101¯2) ZnO substrates , 2013 .

[23]  M. Grundmann,et al.  Exciton–phonon coupling and exciton thermalization in MgxZn1−xO thin films , 2008 .

[24]  M. R. Wagner,et al.  Γ 7 valence band symmetry related hole fine splitting of bound excitons in ZnO observed in magneto-optical studies , 2009 .

[25]  Rüdiger Goldhahn,et al.  Dielectric Function of Nitride Semiconductors: Recent Experimental Results , 2003 .

[26]  R. J. Elliott,et al.  Intensity of Optical Absorption by Excitons , 1957 .

[27]  Gyu-Chul Yi,et al.  Metalorganic vapor-phase epitaxial growth and photoluminescent properties of Zn1−xMgxO(0⩽x⩽0.49) thin films , 2001 .

[28]  M. Eickhoff,et al.  Contactless electroreflectance studies of free exciton binding energy in Zn1-xMgxO epilayers , 2013 .

[29]  J. Chauveau,et al.  Single phase a-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents , 2012 .

[30]  Marius Grundmann,et al.  Dielectric functions (1 to 5 eV) of wurtzite MgXZn1 -XO (x≤0.29) thin films , 2003 .

[31]  Conduction band parameters of ZnO , 2006 .

[32]  H. Morkoç,et al.  A COMPREHENSIVE REVIEW OF ZNO MATERIALS AND DEVICES , 2005 .

[33]  A. K. Sharma,et al.  Refractive indices and absorption coefficients of MgxZn1−xO alloys , 2000 .

[34]  J. Wrzesinski,et al.  Two-photon and three-photon spectroscopy of ZnO under uniaxial stress , 1997 .

[35]  C. Klingshirn,et al.  ZnO: From basics towards applications , 2007 .

[36]  Akira Ohtomo,et al.  MgxZn1−xO as a II–VI widegap semiconductor alloy , 1998 .

[37]  UV VUV spectroscopic ellipsometry of ternary MgxZn1-xO (0≤x≤0.53) thin films , 2004 .

[38]  H. Osada,et al.  Optical characterization by variable angle spectroscopic ellipsometry of nitrogen-doped MgxZn1 − xO thin films prepared by the plasma-assisted reactive evaporation method , 2014 .

[39]  J. Chauveau,et al.  Non-polar a-plane ZnMgO/ZnO quantum wells grown by molecular beam epitaxy , 2008 .

[40]  Shun Lien Chuang,et al.  k.p method for strained wurtzite semiconductors , 1996 .