On the threshold voltage of nanoscale bulk nMOSFETs with [110]/(001) uniaxial stress and quantum effects
暂无分享,去创建一个
Weiqi Wang | H. Zhang | Guanyu Wang | Jun Yuan | Zhen Wang | Wen Wang
[1] Scott E. Thompson,et al. Strain effects on three-dimensional, two-dimensional, and one-dimensional silicon logic devices: Predicting the future of strained silicon , 2010 .
[2] L. Selmi,et al. Semi-classical transport modelling of CMOS transistors with arbitrary crystal orientations and strain engineering , 2009 .
[3] A. DasGupta,et al. Compact model of short-channel MOSFETs considering quantum mechanical effects , 2009 .
[4] P. K. Basu,et al. Modelling of threshold voltage and subthreshold slope of strained-Si MOSFETs including quantum effects , 2008 .
[5] S. Selberherr,et al. Electron Mobility Model for $\langle \hbox{110} \rangle$ Stressed Silicon Including Strain-Dependent Mass , 2007, IEEE Transactions on Nanotechnology.
[6] M. De Michielis,et al. Analytical Models for the Insight Into the Use of Alternative Channel Materials in Ballistic nano-MOSFETs , 2007, IEEE Transactions on Electron Devices.
[7] M.J. Kumar,et al. A simple analytical threshold voltage model of nanoscale single-layer fully depleted strained-silicon-on-insulator MOSFETs , 2006, IEEE Transactions on Electron Devices.
[8] S. Thompson,et al. Uniaxial-process-induced strained-Si: extending the CMOS roadmap , 2006, IEEE Transactions on Electron Devices.
[9] N. Sugiyama,et al. Strained-SOI Technology for High-Speed CMOS Operation , 2006, 2006 International Symposium on VLSI Technology, Systems, and Applications.
[10] P. T. Lai,et al. A 2-D Threshold-Voltage Model for Small MOSFET with Quantum-Mechanical Effects , 2005, 2005 IEEE Conference on Electron Devices and Solid-State Circuits.
[11] P. T. Lai,et al. Threshold Voltage Model of SiGe Channel pMOSFET without Si Cap Layer , 2005, 2005 IEEE Conference on Electron Devices and Solid-State Circuits.
[12] K. Saraswat,et al. Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
[13] J. Fossum,et al. On the threshold Voltage of strained-Si-Si/sub 1-x/Ge/sub x/ MOSFETs , 2005, IEEE Transactions on Electron Devices.
[14] Ming Tang,et al. An analytical threshold voltage model of NMOSFETs with hot-carrier induced interface charge effect , 2005, 2004 IEEE International Conference on Semiconductor Electronics.
[15] J. Fossum,et al. Comparison of threshold-voltage shifts for uniaxial and biaxial tensile-stressed n-MOSFETs , 2004, IEEE Electron Device Letters.
[16] Jinfeng Kang,et al. Threshold voltage model for MOSFETs with high-k gate dielectrics , 2002 .
[17] K. Rim,et al. Fabrication and analysis of deep submicron strained-Si n-MOSFET's , 2000 .
[18] Kunihiro Suzuki. Short channel MOSFET model using a universal channel depletion width parameter , 2000 .
[19] Bin Yu,et al. Short-channel effect improved by lateral channel-engineering in deep-submicronmeter MOSFET's , 1997 .
[20] J. Dijkstra,et al. Hole transport in strained Si , 1997 .
[21] S. Laux,et al. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys , 1996 .
[22] C. Hu,et al. Threshold voltage model for deep-submicrometer MOSFETs , 1993 .
[23] Yasuyuki Ohkura,et al. Quantum effects in Si n-MOS inversion layer at high substrate concentration , 1990 .
[24] L. D. Yau,et al. A simple theory to predict the threshold voltage of short-channel IGFET's , 1974 .