论文信息 - Formation of Palladium Silicide on Heavily Doped Si(001) Substrates Using Ti Intermediate Layer

Formation of Palladium Silicide on Heavily Doped Si(001) Substrates Using Ti Intermediate Layer

The formation of palladium silicide on Pd/Ti/Si systems with and without heavy B-doping has been investigated. For comparison, Pd2Si was also formed on Pd/Si systems. The agglomeration of Pd2Si could be retarded in Pd/Ti/Si systems with and without B-doping after annealing at 600 °C. The existence of the Ti layer could improve the thermal stability of Pd2Si. In addition, epitaxial or highly oriented Pd2Si formed in Pd/Ti/Si systems. The two orientation relationships of Pd2Si layers were identified to be Pd2Si[110]∥Si[110] and Pd2Si[110]∥Si[001], and Pd2Si[100]∥Si[110] and Pd2Si[001]∥Si[001]. The formation of strained epitaxial Pd2Si layers was found in Pd/Ti/Si systems. The improvement in the thermal stability of Pd2Si and the formation of epitaxial or highly oriented Pd2Si in Pd/Ti/Si systems were observed with and without B-doping.

R. Suryana | O. Nakatsuka | S. Zaima

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