16.7 A fully-integrated half-duplex data/power transfer system with up to 40Mb/s data rate, 23mW output power and on-chip 5kV galvanic isolation

Galvanic isolation is becoming an essential requisite for several low-power applications, such as sensor interfaces and medical devices. In the last years, different solutions of silicon-integrated data transmission with galvanic isolation have been proposed that are based on RF links [1], capacitive couplings [2] or integrated coreless transformers [3]. As far as the power transfer is concerned, a dedicated link exploiting a discrete transformer is the typical solution. State-of-the-art devices currently adopt post-processed technologies and thick Au metals to implement the power link [4]. In this work, a fully integrated system is demonstrated for galvanically isolated power and bidirectional half-duplex data transfer by using a single integrated transformer [5].

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[2]  Vincenzo Fiore,et al.  30.4 A 13.56MHz RFID tag with active envelope detection in an organic complementary TFT technology , 2014, 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC).

[3]  Baoxing Chen,et al.  Isolated half-bridge gate driver with integrated high-side supply , 2008, 2008 IEEE Power Electronics Specialists Conference.

[4]  N. Sooch,et al.  A CMOS direct access arrangement using digital capacitive isolation , 2001, 2001 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC (Cat. No.01CH37177).