Orientation effect on AlGaAs/GaAs heterojunction bipolar transistors
暂无分享,去创建一个
[1] P. Asbeck,et al. Piezoelectric effects in GaAs FET's and their role in orientation-dependent device characteristics , 1984, IEEE Transactions on Electron Devices.
[2] D. Ueda,et al. Effect of emitter-base spacing on the current gain of AlGaAs/GaAs heterojunction bipolar transistors , 1989, IEEE Electron Device Letters.
[3] S. Adachi. GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications , 1985 .
[4] L. M. Lunardi,et al. Submicron scaling of AlGaAs/GaAs self-aligned thin emitter heterojunction bipolar transistors (SATE-HBT) with current gain independent of emitter area , 1989 .
[5] James S. Harris,et al. Diode ideality factor for surface recombination current in AlGaAs/GaAs heterojunction bipolar transistors , 1992 .
[6] R. Zucca,et al. Orientation effect on planar GaAs Schottky barrier field effect transistors , 1980 .
[7] K. Honjo,et al. Emitter size effect on current gain in fully self-aligned AlGaAs/GaAs HBT's with AlGaAs surface passivation layer , 1990, IEEE Electron Device Letters.
[8] J. Harris,et al. Comparison of the effects of surface passivation and base quasi‐electric fields on the current gain of AlGaAs/GaAs heterojunction bipolar transistors grown on GaAs and Si substrates , 1991 .
[9] L. B. Freund,et al. Development and experimental verification of a two-dimensional numerical model of piezoelectrically induced threshold voltage shifts in GaAs MESFETs , 1988 .