Noise correlations in magnetic field sensitive transistors

Measurements are presented of noise voltage power spectral density (PSD) on various dual collector magnetotransistors (MTs) fabricated in CMOS and bipolar technologies which are sensitive to magnetic fields parallel to the chip surface. The PSD of the differential signal is at least 100 times smaller than the single-ended counterpart. The correlation coefficient is approximately unity and seems to be independent of the fabrication process. In dual-drain MAGFETs, the noise voltage PSD is about four times as large as that of the single-ended output. A strong negative correlation in drain noise voltages is observed.<<ETX>>