Progress In The LPE of HgZnTe, An Alternative Material For IR Photon-Detector Arrays

The solid solution HgZnTe is an attractive material for IR photon detectors. The liquid phase epitaxy growth technique, used in our laboratory for HgZnTe, is briefly described. The characteristics of p type HgZnTe epilayers, before and post an annealing process in Hg atmosphere, are presented. The status of HgZnTe as an alternative material to HgCdTe for IR photon detectors is discussed.