Optimization of innovative approaches to the shortening of filling times in 3D integrated through-silicon vias (TSVs)

The continuously decreasing size of integrated circuits is the driving force for the emergence of three-dimensional (3D) integration. The through-silicon via (TSV) is the heart of 3D IC/Si integrations, providing the shortest vertical interconnections, and it has a large number of significant advantages. In this paper, a new additive system specifically developed for high aspect ratio TSVs is introduced for TSV electroplating. A wafer is patterned using the deep reactive ion etching (DRIE) technique, and the seed layer is deposited using the physical vapor deposition (PVD) technique. Anode position optimization, a multi-step TSV filling process, additive concentration and plating current density optimization are conducted to enhance the filling efficiency while maintaining the void-free filling profile. The availability is verified by the wafer-segment plating of TSVs. The mechanism is investigated using linear sweep voltammetry (LSV), chronoamperometry, and a numerical simulation method.

[1]  M. Kim,et al.  MSA as a Supporting Electrolyte in Copper Electroplating for Filling of Damascene Trenches and Through Silicon Vias , 2011 .

[2]  K. Amaya,et al.  Inverse analysis of accelerator distribution in copper through silicon via filling , 2012 .

[3]  Wei-Ping Dow,et al.  Evaluating the Filling Performance of a Copper Plating Formula Using a Simple Galvanostat Method , 2006 .

[4]  Min Wu,et al.  Environmental benefits of methanesulfonic acid. Comparative properties and advantages , 1999 .

[5]  Chi-Chang Hu,et al.  Effects of deposition modes on the microstructure of copper deposits from an acidic sulfate bath , 2003 .

[6]  Wei-Ping Dow,et al.  Sensitivity Enhancement for Quantitative Electrochemical Determination of a Trace Amount of Accelerator in Copper Plating Solutions , 2011 .

[7]  A. Radisic,et al.  Modeling the Bottom-Up Filling of Through-Silicon vias Through Suppressor Adsorption/Desorption Mechanism , 2013 .

[8]  T. Moffat,et al.  Accelerator Surface Phase Associated with Superconformal Cu Electrodeposition , 2010 .

[9]  Taro Hayashi,et al.  High-Speed Through Silicon Via(TSV) Filling Using Diallylamine Additive , 2011 .

[10]  L. Curtiss,et al.  Chloride Ion Catalysis of the Copper Deposition Reaction , 1995 .

[11]  S. Yau,et al.  In Situ STM of 3-Mercaptopropanesulfonate Adsorbed on Pt(111) Electrode and Its Effect on the Electrodeposition of Copper , 2010 .

[12]  Wei-Ping Dow,et al.  Interactions Between Brightener and Chloride Ions on Copper Electroplating for Laser-Drilled Via-Hole Filling , 2003 .

[13]  Daniel Wheeler,et al.  Superconformal film growth: Mechanism and quantification , 2005, IBM J. Res. Dev..

[14]  M. Kim,et al.  Cu Bottom-Up Filling for Through Silicon Vias with Growing Surface Established by the Modulation of Leveler and Suppressor , 2013 .

[15]  Ryutaro Maeda,et al.  Void-Free Copper Filling of Through Silicon Via by Periodic Pulse Reverse Electrodeposition , 2014 .

[16]  Ulrike Wallrabe,et al.  Unconventional applications of wire bonding create opportunities for microsystem integration , 2013 .

[17]  Sheng Liu,et al.  Simulation and fabrication of two Cu TSV electroplating methods for wafer-level 3D integrated circuits packaging , 2013 .

[18]  T. Hang,et al.  Linear Sweep Voltammetric Study on the Copper Electrodeposition of Though-Silicon-Vias , 2014 .

[19]  T. Moffat,et al.  Extreme Bottom-up Filling of Through Silicon Vias and Damascene Trenches with Gold in a Sulfite Electrolyte , 2013 .

[20]  John H. Lau,et al.  Overview and outlook of through‐silicon via (TSV) and 3D integrations , 2011 .

[21]  A. Etcheberry,et al.  Investigation of organics adsorption and inclusion at the growing interfaces during the Damascene process , 2008 .

[22]  T. Hang,et al.  Behaviors of Chloride Ions in Methanesulfonic Acid Bath for Copper Electrodeposition of Through-Silicon-Via , 2013 .

[23]  Jianmin Miao,et al.  Through-wafer electroplated copper interconnect with ultrafine grains and high density of nanotwins , 2007 .

[24]  Jong Hyeong Kim,et al.  Reduction of defects in TSV filled with Cu by high-speed 3-step PPR for 3D Si chip stacking , 2011, Microelectron. Reliab..

[25]  T. Moffat,et al.  Electrodeposition of Copper in the SPS-PEG-Cl Additive System I. Kinetic Measurements: Influence of SPS , 2004 .

[26]  J. Miao,et al.  Mechanical and microstructural characterization of high aspect ratio through-wafer electroplated copper interconnects , 2007 .

[27]  Wei-Ping Dow,et al.  Influence of Molecular Weight of Polyethylene Glycol on Microvia Filling by Copper Electroplating , 2005 .

[28]  Wei-Ping Dow,et al.  Accelerator Screening by Cyclic Voltammetry for Microvia Filling by Copper Electroplating , 2013 .

[29]  J. Bonevich,et al.  Superconformal Electrodeposition of Copper in 500–90 nm Features , 2000 .

[30]  S. J. Parulekar,et al.  Interactions of Chloride and 3-Mercapto-1-Propanesulfonic Acid in Acidic Copper Sulfate Electrolyte , 2008 .

[31]  T. Graves-abe,et al.  Three-Dimensional Wafer Stacking Using Cu TSV Integrated with 45 nm High Performance SOI-CMOS Embedded DRAM Technology , 2014 .

[32]  Wei-Ping Dow,et al.  Influence of convection-dependent adsorption of additives on microvia filling by copper electroplating , 2005 .

[33]  Said F. Al-Sarawi,et al.  A Review of 3-D Packaging Technology , 1998 .

[34]  Tengfei Jiang,et al.  Measurement and analysis of thermal stresses in 3D integrated structures containing through-silicon-vias , 2013, Microelectron. Reliab..

[35]  W. Dow,et al.  Roles of Chloride Ion in Microvia Filling by Copper Electrodeposition I. Studies Using SEM and Optical Microscope , 2005 .

[36]  Wei-Ping Dow,et al.  Roles of chloride ion in microvia filling by copper electrodeposition -II. Studies using EPR and galvanostatic measurements , 2005 .

[37]  A. Gewirth,et al.  Influence of Additives on Copper Electrodeposition on Physical Vapor Deposited (PVD) Copper Substrates , 2003 .

[38]  C. Hoof,et al.  Filling of microvia with an aspect ratio of 5 by copper electrodeposition , 2009 .

[39]  Wei-Ping Dow,et al.  Through-Hole Filling by Copper Electroplating , 2008 .

[40]  R. Dean,et al.  A Novel Plating Technique for Realizing Copper Filled TSVs in Silicon Wafers , 2011 .

[41]  J. Miao,et al.  Aspect-Ratio-Dependent Copper Electrodeposition Technique for Very High Aspect-Ratio Through-Hole Plating , 2006 .

[42]  U. Landau,et al.  Mechanistic Analysis of the “Bottom-Up” Fill in Copper Interconnect Metallization , 2009 .

[43]  T. Osaka,et al.  Effects of Additives on Copper Electrodeposition in Submicrometer Trenches , 2005 .

[44]  John H. Lau.  Recent Advances and New Trends in Nanotechnology and 3D Integration for Semiconductor Industry , 2012 .

[45]  Mark J. Willey,et al.  Influence of Aromatic Functionality on Quaternary Ammonium Levelers for Cu Plating , 2011 .

[46]  S. Yau,et al.  In situ STM imaging of bis-3-sodiumsulfopropyl-disulfide molecules adsorbed on copper film electrodeposited on Pt(111) single crystal electrode. , 2011, Langmuir : the ACS journal of surfaces and colloids.

[47]  P. Broekmann,et al.  Quasi-Reversible Interaction of MPS and Chloride on Cu(100) Studied by In Situ STM , 2013 .

[48]  Taro Hayashi,et al.  Correlation between Filled Via and Produced Cuprous Ion Concentration by Reverse Current Waveform , 2013 .

[49]  J. Harb,et al.  Additive Behavior during Copper Electrodeposition in Solutions Containing Cl − , PEG, and SPS , 2003 .