Photon Energy Dependence of Radiation Effects in MOS Structures

MOS capacitors with oxide thicknesses of 750Å, 3500Å and 6000Å were irradiated using a Co60 source and a Cu target x-ray tube. At low fields across the oxides (¿1MV/cm), shifts in the flatband voltages observed with Co60 were twice those measured with the Cu tube at the same oxide dose. At higher fields (>1MV/cm) the differences disappear. The observations are interpreted to be due to differences in the electron-hole recombination dynamics for the two radiation energies. Additionally, it was observed that the Si-SiO2 interface states trap holes with an efficiency that decreases as the square root of the electric field across the oxide.

[1]  J. R. Srour,et al.  Radiation-Induced Charge Transport and Charge Buildup in SiO2 Films at Low Temperatures , 1976, IEEE Transactions on Nuclear Science.

[2]  B. L. Gregory,et al.  Process Optimization of Radiation-Hardened CMOS Integrated Circuits , 1975, IEEE Transactions on Nuclear Science.

[3]  Oxide thickness dependence of high‐energy‐electron‐, VUV‐, and corona‐induced charge in MOS capacitors , 1976 .

[4]  R. C. Hughes,et al.  THE EFFECT OF DIFFUSION ON THE PHOTOCONDUCTIVITY OF THIN FILMS , 1980 .

[5]  R. C. Hughes.  Hole mobility and transport in thin SiO2 films , 1975 .

[6]  F. B. McLean,et al.  Electron-hole pair-creation energy in SiO2 , 1975 .

[7]  H. E. Boesch,et al.  Hole Transport and Recovery Characteristics of SiO2 Gate Insulators , 1976, IEEE Transactions on Nuclear Science.

[8]  R. Lee,et al.  Photocurrents and photoconductive yield in MOS structures during x irradiation , 1975 .

[9]  A. S. Grove,et al.  Effects of ionizing radiation on oxidized silicon surfaces and planar devices , 1967 .

[10]  J. R. Srour,et al.  ELECTRON TRANSPORT IN SiO2 FILMS AT LOW TEMPERATURES , 1980 .

[11]  K. Y. Chiu,et al.  Charge transport studies in SiO 2 : Processing effects and implications for radiation hardening , 1974 .

[12]  H. E. Boesch,et al.  Rapid annealing and charge injection in Al 2 O 3 MIS capacitors , 1974 .

[13]  T. Collins,et al.  Dynamic model for e‐beam irradiation of MOS capacitors , 1979 .

[14]  J. R. Srour,et al.  Hole and electron transport in SiO2 films , 1974 .

[15]  R. C. Hughes.  High field electronic properties of SiO2 , 1978 .

[16]  R. Powell.  Radiation Induced Hole Transport and Electron Tunnel Injection in SiO2 Films , 1975, IEEE Transactions on Nuclear Science.

[17]  H. E. Boesch,et al.  Charge Yield and Dose Effects in MOS Capacitors at 80 K , 1976, IEEE Transactions on Nuclear Science.

[18]  R. C. Hughes.  Electronic and ionic charge carriers in irradiated single crystal and fused quartz , 1975 .

[19]  R. C. Hughes,et al.  Hole Transport in MOS Oxides , 1975, IEEE Transactions on Nuclear Science.

[20]  R. C. Hughes.  Charge-Carrier Transport Phenomena in Amorphous SiO 2 : Direct Measurement of the Drift Mobility and Lifetime , 1973 .

[21]  T. Flanagan,et al.  Transient Response of MOS Capacitors to High-Energy Electron Irradiation , 1975, IEEE Transactions on Nuclear Science.

[22]  D. B. Brown,et al.  Dose and Dose Rate Dependence of 8080a Microprocessor Failures , 1980, IEEE Transactions on Nuclear Science.

[23]  M. Peckerar,et al.  Measurement and calculation of absolute intensities of x‐ray spectra , 1975 .

[24]  D. Taylor,et al.  Electron-beam-induced conduction in SiO2 thin films , 1979 .