Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions
暂无分享,去创建一个
A. Allerman | M. Crawford | R. Kaplar | A. Armstrong | Michael L. Smith | J. Dickerson | B. Gunning | A. Binder | L. Yates | V. Abate | Jeffrey Steinfeldt