论文信息 - Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device - 字舞流文

Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device

H. Barnaby | M. Kozicki | R. Fang | Baoshun Zhang | Hong Chen | Xuanqi Huang | Yuji Zhao | K. Fu | H. Fu | Chen Yang | Tsung-han Yang | Jingan Zhou | Jossue A. Montes