Optically gated MOSFET modeling

In the recent decades, interest has been shown by the researcher towards the modeling of the optical effects on MOSFET with submicron channel length. It is mainly because device is expected to emerge as potential device to be integrated as MMIC, OEIC and ASIC for optical based system particularly optical communication. Present paper makes an attempt to investigate dependence of I-V characteristics and transconductance on optical illumination. Optical effects are mainly due to the lowering of surface potential barrier in presence of illumination called photon induced barrier lowering (PIBL). Investigation shows that drain current and the trans-conductance increases significantly in the presence of optical illumination. The device is expected to emerge for high speed application in optical system viz. photo-detector, optical switch, and imaging.