论文信息 - Improved prediction of interface-trap generation in NMOST's

Improved prediction of interface-trap generation in NMOST's

Hot-carrier-induced interface-trap generation in NMOSFET's is a serious reliability hazard for CMOS circuits. Its prediction has been either inaccurate or it needed many process dependent fitting parameters. We introduce a new method that improves lifetime prediction by orders of magnitude. Our method requires no additional fitting parameter and is applicable in existing circuit simulators. From the (time dependent) voltages and currents, available in a circuit simulator, we predict the number of generated interface traps. Our prediction method has been checked in more than a hundred experiments on NMOSFET's with 0.2-2.0-/spl mu/m length, 0.8-10-/spl mu/m width, and 5.5-25-nm oxide thickness.<<ETX>>

R. Woltjer | G.M. Paulzen | R. Woltjer | G. Paulzen

[1] K. Seki,et al. Circuit aging simulator (CAS) , 1988, Technical Digest., International Electron Devices Meeting.

[2] J. van der Pol,et al. Relation between thehot carrier lifetime of transistors and CMOS SRAM products , 1990, 28th Annual Proceedings on Reliability Physics Symposium.

[3] Chenming Hu,et al. Hot-electron-induced MOSFET degradation—Model, monitor, and improvement , 1985, IEEE Transactions on Electron Devices.

[4] E. Takeda,et al. An empirical model for device degradation due to hot-carrier injection , 1983, IEEE Electron Device Letters.

[5] Tak H. Ning,et al. Emission probability of hot electrons from silicon into silicon dioxide , 1977 .

[6] C. Hu,et al. A model for hot-electron-induced MOSFET linear-current degradation based on mobility reduction due to interface-state generation , 1991 .

[7] R. Woltjer,et al. Universal description of hot-carrier-induced interface states in NMOSFETs , 1992, 1992 International Technical Digest on Electron Devices Meeting.

[8] D. J. Di Maria. Degradation and Breakdown of Silicon Dioxide Films on Silicon , 1993 .

[9] A. Elliot,et al. The use of charge pumping currents to measure surface state densities in MOS transistors , 1976 .