Design and Implement the Bondwire Inductors for Switching Power Amplifier

Background: Most of the switching power amplifiers (PAs) are employed on-chip spiral inductors for matching and loading purpose. However, on-chip spiral inductors have low quality factor (Q) owing to high substrate loss and high parasitics. In addition, spiral inductors occupy a large space on-chip and also encounter self-resonance in microwave frequency band, which permits their use beyond that frequency. Therefore, high efficiency and smaller chip area of power amplifiers are difficult to obtain. Objective: The main objective of design and implement the bondwire inductors for switching PA are to obtain high Q thus a high output power and a high efficiency with the smallest chip area. Results: The simulated results for bondwires indicate that the values are equivalent to 2.0 nH for the 2-mm bondwire and 4.1 nH for the 5-mm bondwire. Furthermore, the implementation of bondwire inductors in switching PA indicate that the PA delivers 23 dBm output power and 44.5% power added efficiency with 3.3 V power supply into a 50 Ω load with the chip area is 0.37 mm². Conclusion: The proposed bondwire inductors and implementation in a switching power amplifier shows that power amplifier obtain good output power and efficiency with the smallest chip area.

[1]  Xin Yin,et al.  A 2.45-GHz $+$20-dBm Fast Switching Class-E Power Amplifier With 43% PAE and a 18-dB-Wide Power Range in 0.18-$\mu \hbox{m}$ CMOS , 2012, IEEE Transactions on Circuits and Systems II: Express Briefs.

[2]  Apinunt Thanachayanont,et al.  A 0.1-W CMOS class-E power amplifier for Bluetooth applications , 2003, TENCON 2003. Conference on Convergent Technologies for Asia-Pacific Region.

[3]  Michiel Steyaert,et al.  A 2.45-GHz 0.13-$\mu{\hbox {m}}$ CMOS PA With Parallel Amplification , 2007, IEEE Journal of Solid-State Circuits.

[4]  Paul R. Gray,et al.  A 1.9-GHz, 1-W CMOS class-E power amplifier for wireless communications , 1999 .

[5]  Hafez Fouad,et al.  Self-biased 0.13- µm CMOS 2.4-GHz Class E cascode power amplifier , 2009, 2009 National Radio Science Conference.

[6]  F. Svelto,et al.  A 30.5 dBm 48% PAE CMOS Class-E PA With Integrated Balun for RF Applications , 2008, IEEE Journal of Solid-State Circuits.

[7]  K. Yoshida,et al.  A CMOS class-E power amplifier of 40-% PAE at 5 GHz for constant envelope modulation system , 2013, 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

[8]  Jhin-Fang Huang,et al.  An ISM band CMOS power amplifier design for WLAN , 2006 .

[9]  Sungho Lee,et al.  A CMOS Class-E Power Amplifier With Voltage Stress Relief and Enhanced Efficiency , 2010, IEEE Transactions on Microwave Theory and Techniques.

[10]  Ockgoo Lee,et al.  Power-Combining Transformer Techniques for Fully-Integrated CMOS Power Amplifiers , 2008, IEEE Journal of Solid-State Circuits.

[11]  Michiel Steyaert,et al.  A 700-MHz 1-W fully differential CMOS class-E power amplifier , 2002 .

[12]  Jun Tan,et al.  Design of Efficient Class-E Power Amplifiers for Short-Distance Communications , 2012, IEEE Transactions on Circuits and Systems I: Regular Papers.

[13]  F. Svelto,et al.  Analysis of reliability and power efficiency in cascode class-E PAs , 2006, IEEE Journal of Solid-State Circuits.

[14]  Andrei Grebennikov,et al.  Switchmode RF Power Amplifiers , 2007 .

[15]  F. Svelto,et al.  A 1.4 GHz-2 GHz wideband CMOS class-E power amplifier delivering 23 dBm peak with 67% PAE , 2005, 2005 IEEE Radio Frequency integrated Circuits (RFIC) Symposium - Digest of Papers.

[16]  Alireza Saberkari,et al.  A novel 2.4 GHz CMOS class-E power amplifier with efficient power control for wireless communications , 2010, 2010 17th IEEE International Conference on Electronics, Circuits and Systems.

[17]  D. Sira,et al.  Output Power Control in Class-E Power Amplifiers , 2010, IEEE Microwave and Wireless Components Letters.