Perspectives on III–V compound MIS structures

An overview and assessment is provided of some aspects of the physics and technology of InP, GaAs, InAs, and InSb MIS structures with homomorphic and heteromorphic dielectric layers. Experimental measurements made on such InP and InSb MIS structures are interpreted in the context of the experimental and theoretical framework developed for the Si–SiOx MOS system. GaAs and InAs MIS structure exhibit anomalies attributed principally to pinning of the Fermi level by extrinsic surface states near midgap for GaAs and within the conduction band for InAs. Microwave power gain can be obtained from InP and GaAs MIS field effect transistors irrespective of the density of fast surface states present in them; the surface states cannot respond to the μ‐wave signals applied to the MISFET gates.