论文信息 - Schottky diode parameters extraction using Lambert W function

Schottky diode parameters extraction using Lambert W function

Exact analytical solution is presented for the current flow in Schottky barrier diode with inclusion of series resistance and shunt conductance using the Lambert W function. The presented expression enables determination of more realistic values for the parameters of various quality Schottky diodes.

M. Guziewicz | W. Jung

[1] M. Lyakas,et al. Analysis of nonideal Schottky and p‐n junction diodes—Extraction of parameters from I–V plots , 1995 .

[2] H. Grubin. The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.

[3] H. Norde. A modified forward I‐V plot for Schottky diodes with high series resistance , 1979 .

[4] N. Cheung,et al. Extraction of Schottky diode parameters from forward current-voltage characteristics , 1986 .

[5] G. Eisenstein,et al. On the extraction of linear and nonlinear physical parameters in nonideal diodes , 1999 .

[6] C. Popescu,et al. I—V Curve Shape Factor for Thin p—n Junctions at High Injection Levels , 1996 .

[7] Z. Ouennoughi,et al. Extraction of Schottky diode parameters including parallel conductance using a vertical optimization method , 2002 .

[8] A. Jayakumar,et al. Exact analytical solution for current flow through diode with series resistance , 2000 .

[9] Juin J. Liou,et al. A generalized model for a two-terminal device and its applications to parameter extraction , 1995 .