Optical and Short‐Wavelength Recording Properties of InSbTe Phase Change Thin Films

Optical absorption spectra of In-Sb-Te thin films prepared by the dc magnetron sputtering method are studied. The absorption increases with the decrease of wavelength in the range 400 to 1000 nm. There is a comparatively large absorption in the region 400 to 600 nm compatible with the wavelengths of argon laser which is the typical short-wavelength optical recording source. Optical storage performance of the films clearly shows that larger reflectivity contrast can be obtained at lower power argon laser (514.5 nm) irradiation. These results demonstrate that the In-Sh-Te film is a promising candidate for short-wavelength direct overwritable phase change optical storage.