Heterostructure barrier varactors at submillimetre waves

We present an overview of recent results concerning quantum barrier varactors, also called heterostructure barrier varactors (HBV). This device is normally constructed as a mesa device, with one or several thin (ca. 200 A) barriers made from a larger bandgap material. The diodes are excellent as multipliers and have several advantages over the common Schottky barrier varactor. The hbv only generates odd harmonics of the input power, can be built to handle large powers and permits a large device area at very high frequencies. We present theoretical design and performance characteristics for triplers and quintuplers and give an overview of hbv multiplier experiments.

[1]  R.G. Harrison,et al.  A Ka-band planar tripler based on a stacked symmetric InP heterostructure-barrier varactor , 1995, Proceedings of 1995 IEEE MTT-S International Microwave Symposium.

[2]  G. B. Tait,et al.  DC and large-signal time-dependent electron transport in heterostructure devices: an investigation of the heterostructure barrier varactor , 1995 .

[3]  M. Shur,et al.  A novel Schottky/2-DEG diode for millimeter- and submillimeter-wave multiplier applications , 1992, IEEE Electron Device Letters.

[4]  C. C. H. Tang.  An Exact Analysis of Varactor Frequency Multipliers (Correspondence) , 1966 .

[5]  Jack R. East,et al.  Current saturation in submillimeter-wave varactors , 1992 .

[6]  Antti V. Räisänen,et al.  A single barrier varactor quintupler at 170 GHz , 1995 .

[8]  Debabani Choudhury,et al.  A 200 GHz tripler using a single barrier varactor , 1992 .

[9]  M Missous,et al.  A multi-stack quantum barrier varactor on InP for MM-wave frequency tripling , 1995, 1995 25th European Microwave Conference.

[10]  Anders Rydberg,et al.  Quantum-Barrier-Varactor Diodes for High-Efficiency Millimetre-Wave Multipliers , 1989 .

[11]  A. Rydberg,et al.  Millimeter- and submillimeter-wave multipliers using quantum-barrier-varactor (QBV) diodes , 1990, IEEE Electron Device Letters.

[12]  Analysis of symmetric-varactor-frequency triplers , 1993, 1993 IEEE MTT-S International Microwave Symposium Digest.

[13]  S. M. Sze,et al.  Physics of semiconductor devices , 1969 .

[14]  T. C. L. G. Sollner,et al.  Observation of millimeter‐wave oscillations from resonant tunneling diodes and some theoretical considerations of ultimate frequency limits , 1987 .

[15]  R. Harrison,et al.  Stacked Heterostructure Barrier Varactors on InP for Millimeter Wave Triplers , 1994, European Microwave Conference.

[16]  U. Lieneweg,et al.  Barrier-intrinsic-N+ (BIN) diodes for near-millimeter wave generation , 1987, 1987 Twelth International Conference on Infrared and Millimeter Waves.

[17]  S. L. Wright,et al.  Energy band alignment in GaAs:(Al,Ga)As heterostructures: The dependence on alloy composition , 1986 .

[18]  Anders Rydberg,et al.  Progress on single barrier varactors for submillimeter wave power generation , 1993 .

[19]  Quantum-well high-efficiency millimetre-wave frequency tripler , 1989 .

[20]  J. R. Jones,et al.  Heterostructure barrier varactor simulation using an integrated hydrodynamic device/harmonic-balance circuit analysis technique , 1994, IEEE Microwave and Guided Wave Letters.

[21]  Robert G. Harrison,et al.  GaAs single-barrier varactors for millimeter-wave triplers: guidelines for enhanced performance , 1994 .

[22]  T. Tolmunen,et al.  Accurate characterization of varactors with fF capacitance , 1991, International Conference on Infrared and Millimeter Waves.

[23]  Anders Rydberg,et al.  Quantum‐well and quantum‐barrier diodes for generating submillimeter wave power , 1991 .

[24]  N. R. Erickson.  A High Efficiency Frequency Tripler for 230 GHz , 1982, 1982 12th European Microwave Conference.