Mask pattern interference in AlGaInAs selective area metal-organic vapor-phase epitaxy: Experimental and modeling analysis

We studied selective area growth modeling and characterization of the AlGaInAs material system. We used a three-dimensional vapor phase diffusion model to extract the effective diffusion lengths of Al, Ga, and In species from measured thickness profiles of the three binaries AlAs, GaAs, and InP. Our growth conditions yield to 50, 85, and 10 μm for Al, Ga, and In, respectively. Based on these values, we achieved a precise prediction of AlGaInAs thickness, composition, band gap, and biaxial strain variations in different selective area growth conditions. Particular attention was paid to the influence of neighboring cells in the case of high mask density. This configuration occurs in practical component mask layout. High mask density leads to interferences between masked cells and enhances the effect of the long diffusion length of aluminum and gallium species. Then, the biaxial strain is tensile shifted and the band gap is blue shifted in the vicinity of a mask, compared to reference material features grown...

[1]  T. Tsuchiya,et al.  InGaAlAs selective-area growth on an InP substrate by metalorganic vapor-phase epitaxy , 2005 .

[2]  R. E. Mallard,et al.  Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates , 1993 .

[3]  V. K. Gupta,et al.  Microbeam high-resolution x-ray diffraction in strained InGaAlAs-based multiple quantum well laser structures grown selectively on masked InP substrates , 2005, Journal of Applied Physics.

[6]  R. People,et al.  Monolithically integrated semiconductor optical amplifier and electroabsorption modulator with dual-waveguide spot-size converter input , 2000, IEEE Journal of Selected Topics in Quantum Electronics.

[7]  G. Bastard,et al.  Superlattice band structure in the envelope-function approximation , 1981 .

[8]  C. Caneau,et al.  Selective organometallic vapor phase epitaxy of Ga and In compounds : a comparison of TMIn and TEGa versus TMIn and TMGa , 1993 .

[9]  J. Dantzig,et al.  Growth, characterization, and modeling of ternary InGaAs-GaAs quantum wells by selective-area metalorganic chemical vapor deposition , 1995 .

[10]  Nicholas C. Andreadakis,et al.  Integrated optic mode‐size tapers by selective organometallic chemical vapor deposition of InGaAsP/InP , 1992 .

[11]  Wei Wang,et al.  Monolithically integrated semiconductor optical amplifier and electroabsorption modulator with dual-waveguide spot-size converter input and output , 2005 .

[12]  Yoshiaki Nakano,et al.  Simulation and design of the emission wavelength of multiple quantum well structures fabricated by selective area metalorganic chemical vapor deposition , 2006 .

[13]  G. Allan.  Heterojunctions and Semiconductor Superlattices , 1986 .

[14]  Koji Kudo,et al.  Growth pressure dependence of neighboring mask interference in densely arrayed narrow-stripe selective MOVPE for integrated photonic devices , 2000 .

[15]  F. Poingt,et al.  Modeling and characterization of AlGaInAs and related materials using selective area growth by metal-organic vapor-phase epitaxy , 2007 .

[16]  A. Ramdane,et al.  20-Gb/s integrated DBR laser-EA modulator by selective area growth for 1.55-μm WDM applications , 1997, IEEE Photonics Technology Letters.

[17]  Koji Kudo,et al.  Wavelength-selectable microarray light sources for wide-band DWDM applications , 2002 .

[18]  B. Dagens,et al.  MOVPE growth of AlGaInAs–InP highly tensile-strained MQWs for 1.3 μm low-threshold lasers , 2004 .

[19]  C. Caneau,et al.  Selective area growth of InGaAsP by OMVPE , 1992 .

[20]  Joel N. Schulman,et al.  Wave Mechanics Applied to Semiconductor Heterostructures , 1991 .

[21]  B. Lai,et al.  Strain relaxation and surface migration effects in InGaAlAs and InGaAsP selective-area-grown ridge waveguides , 2006 .

[22]  B. Elsner,et al.  Selective embedded growth by LP-MOVPE in the Ga-In-As-P system , 1992 .