论文信息 - InP-based DHBT with 90% power-added efficiency and 1 W output power at 2 GHZ

InP-based DHBT with 90% power-added efficiency and 1 W output power at 2 GHZ

Abstract We report the growth, fabrication and power performance at 2 GHz of a novel InP-based DHBT. We demonstrate that the conduction band-edge discontinuity between the InGaAs base and the InP can be eliminated by bandgap engineering the base-collector junction. As a result, we fully exploit the advantages of InP for the collector for high breakdown voltage as well as high gain. For class C operation peak PAE of 90% with an output power of 1200 mW at a power density of 2.0 mW μm −2 was achieved.

Takyiu Liu | Chanh Nguyen | Mary Chen | Robinder Virk

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