论文信息 - Simulation of ISFET operation based on the site-binding model

Simulation of ISFET operation based on the site-binding model

A program for the simulation of the response of an ISFET with an oxynitride gateinsulator will be introduced, which is based on the site-binding model and is designed for an ISFET working in constant charge mode. With this program, principal properties of ISFET operation can be calculated, such as pH sensitivity dependent on surface charge density and surface composition. In addition, an ISFET for the detection of protein charges can be simulated. The major result for this device is that the better the ISFET works as a pH sensor, the worse it performs as an immuno-FET.

L. Meixner | L. K. Meixner | S. Koch | S. Koch

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