论文信息 - CW operation of broad-area AlGaAs/GaAs diode lasers grown by MOCVD using TBA in N2 ambient

CW operation of broad-area AlGaAs/GaAs diode lasers grown by MOCVD using TBA in N2 ambient

AlGaAs/GaAs material diode lasers grown by MOCVD using TBA as the group-V source and N2 as the carrier gas, was reported. Lasing has been successfully achieved with a low threshold current density of 506 A/cm2.

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