SOI for asynchronous dynamic circuits

This paper describes applications of Silicon on Insulator SOI to asynchrous dynamic circuits The application also focuses on some important issues in SOI technology performance gain history e ect power reduction and pulsewidth control These important issues are characterized with the help of self resetting SRCMOS circuits which are used in building Reg ister le macro ports wordline x bitlines and dynamic latch The hardware results show that for m Partially Depleted PD SOI technology shows improvement in the performance and the reduction of to in power Supply voltage output loading slew rate duty cycle input pulsewidth and temperature the history e ect of the macro and is the aggregate of individual gates on the critical path Based on the hardware it is shown that the performance of both register le and latch improves by per C re duction in temperature The standby power for SOI reduces by to per C temperature drop down to C The SOI chip is shown to have more signi cant performance improvement at low temperatures compared bulk chip due to the oating body e ect which partially o sets the increase in the threshold voltages Vt The low temperature perfor mance gain is attributed to reduction in capacitance around and rest is due to dynamic threshold voltages At C the register le is capable of functioning close to GHz for read and write operations in a single cycle The other key nding is the history e ect commonly observed in SOI is re duced from to by lowering the operating temperature from room to C

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