论文信息 - The analysis of functional regions in the long-wavelength-infrared interband cascade photodetector

The analysis of functional regions in the long-wavelength-infrared interband cascade photodetector

Electronic structure of functional region of the interband cascade infrared photodetector designed to operate with cut-off wavelength of ~10.7 μm is calculated using second nearest neighbor sp3s* tight binding model with spin-orbit interactions. The effective bandgaps and alignment of the band edges are presented. Lattice mismatch of each region to the GaSb substrate is determined. The influence of InAs incorporation into the InSb interfacial layer is investigated. It is shown that up to 5% InAs addition to InSb interface in InAs/GaSb superlattice absorber is allowed if efficient carrier transport is to be kept. Furthermore, interface of up to x=2% InAsxSb1-x can be used in the proposed InAs/AlSb superlattice intraband relaxation region to keep its proper operation.

[1] Z. R. Wasilewski,et al. QWIPs beyond FPAs: high-speed room-temperature detectors , 2001, SPIE Defense + Commercial Sensing.

[2] Rui Q. Yang,et al. Interband-cascade infrared photodetectors with superlattice absorbers , 2010 .

[3] Elena Plis,et al. InAs/GaSb Type-II Superlattice Detectors , 2014 .

[4] Rui Q. Yang,et al. Interband cascade detectors with room temperature photovoltaic operation , 2005 .

[5] Timothy B. Boykin,et al. Improved fits of the effective masses at Γ in the spin-orbit, second-nearest-neighbor sp 3 s * model: Results from analytic expressions , 1997 .

[6] William R. Frensley,et al. Electrical design of InAs-Sb/GaSb superlattices for optical detectors using full bandstructure sp3s* tight-binding method and Bloch boundary conditions , 2013 .

[7] Boykin,et al. Generalized eigenproblem method for surface and interface states: The complex bands of GaAs and AlAs. , 1996, Physical review. B, Condensed matter.

[8] J. Burdett,et al. Electronic structure and properties of solids , 1996 .

[9] P. Voisin,et al. Virtual crystal description of III–V semiconductor alloys in the tight binding approach , 2016, Journal of Physics: Condensed Matter.