论文信息 - Two-dimensional charge carrier systems for chemical sensors: AlGaN/GaN and diamond

Two-dimensional charge carrier systems for chemical sensors: AlGaN/GaN and diamond

The use of spontaneously formed two-dimensional electron and hole gases at AlGaN/GaN hetero-interfaces and at the surface of hydrogen-terminated diamond for novel sensor devices is reviewed. The physical origin of these two-dimensional carrier systems is briefly described and recent results concerning their interaction with ions and gases are outlined In both cases, a controlled oxidation of the exposed surface turns out to be important for an optimum sensor operation.

[1] Martin Eickhoff,et al. GaN-based heterostructures for sensor applications , 2002 .

[2] Martin Eickhoff,et al. Gas sensitive GaN/AlGaN-heterostructures , 2002 .

[3] Oliver Ambacher,et al. Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition , 1996 .

[4] M. Stutzmann,et al. AlxGa1–xN—A New Material System for Biosensors , 2003 .

[5] Martin Eickhoff,et al. Hydrogen response mechanism of Pt-GaN Schottky diodes , 2002 .

[6] Lester F. Eastman,et al. pH response of GaN surfaces and its application for pH-sensitive field-effect transistors , 2003 .

[7] John L. Crassidis,et al. Sensors and actuators , 2005, Conference on Electron Devices, 2005 Spanish.

[8] S. D. Wolter,et al. High temperature Pt Schottky diode gas sensors on n-type GaN , 1999 .

[9] Martin Eickhoff,et al. Group III-nitride-based gas sensors for combustion monitoring , 2002 .

[10] Martin Eickhoff,et al. Influence of surface oxides on hydrogen-sensitive Pd:GaN Schottky diodes , 2003 .

[11] Jingbiao Cui,et al. Electron Affinity of the Bare and Hydrogen Covered Single Crystal Diamond (111) Surface , 1998 .

[12] Hiroshi Kawarada,et al. Hydrogen-terminated diamond surfaces and interfaces , 1996 .

[13] Martin Eickhoff,et al. Piezoresistivity of AlxGa1−xN layers and AlxGa1−xN/GaN heterostructures , 2001 .