Liquid Phase Epitaxial Growth, Electron Mobility and Maximum Drift Velocity of In1-x GaxAs (x\cong0.5) for Microwave Devices

By avoiding the lattice mismatch between a grown layer and a substrate, a uniform and single crystal layer of In1-xGaxAs (x\cong0.5) is successfully grown on InP by the liquid phase epitaxy. The crystal shows a higher mobility and a larger maximum velocity than GaAs. This mixed crystal is desirable material in electronic properties for microwave and high speed switching devices.