InAs/AlGaSb heterojunction tunnel field‐effect transistor with tunnelling in‐line with the gate field

The first fabrication of a III-V tunnel field-effect transistor (TFET) with tunneling directed perpendicular to the gate is reported. This new transistor geometry utilizes an InAs/Al0.45Ga0.55Sb staggered-gap tunnel junction intended for high on current and steep subthreshold swing. The first measurements of the transistor transport properties at room temperature and -50 °C are provided. Tunneling transport is confirmed by the observation of negative differential resistance in the tunnel junction in the forward bias polarity. Transistor on-current of 21 μA/μm at 0.3 V and subthreshold swing of 830 mV/decade is found. The large subthreshold swing is consistent with the large density of interface traps at the oxide/semiconductor interface (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)