교차 박막 소자의 게이트-소오스 중첩 영역이 균일성에 미치는 영향

U sing the analytic equation for the series resistance of staggered thin-film transistors, the effects of gate-source overlap region on the uniformity are discussed. Assuming that the mask misalignment has the Gaussian distribution, the uniformity of the drain current is calculated by Monte-Carlo simulation. The results shows that the overlap length should be larger than the sum of the effective overlap length and maximum mask misalignment error.