Manufacturable Low-Cost Flip-Chip Mounting Technology for 300–500-GHz Assemblies

We developed a chip mounting technology suitable for low-cost assemblies in the 300–500-GHz frequency range, compatible with standard chip and submount fabrication techniques. The waveguide and transition designs are compatible with indium phosphide heterobipolar transistor millimeter-wave monolithic integrated circuit chip architecture. Increased conductor shielding in different multilayer thin-film waveguide topologies is applied to suppress radiative losses, enabling low-loss interconnects up to 500-GHz bandwidth. Standard flip-chip align-and-place equipment is used to assemble the chips onto submounts. Losses are evaluated by banded ${S}$ -parameter measurements between 10 MHz and 500 GHz. For an optimized stripline-to-stripline transition, an insertion loss of less than 1 dB was measured at 500 GHz.

[1]  D. Stoppel,et al.  Process robustness and reproducibility of sub-mm wave flip-chip interconnect assembly , 2015, 2015 IEEE 24th Electrical Performance of Electronic Packaging and Systems (EPEPS).

[2]  P. Kurpas,et al.  Flip chip mounting of laser diodes with Au/Sn solder bumps: bumping, self-alignment and laser behavior , 1997, 1997 Proceedings 47th Electronic Components and Technology Conference.

[3]  M. Hutter,et al.  Assembly and reliability of flip chip solder joints using miniaturized Au/Sn bumps , 2004, 2004 Proceedings. 54th Electronic Components and Technology Conference (IEEE Cat. No.04CH37546).

[4]  T. Krems,et al.  Millimeter-wave performance of chip interconnections using wire bonding and flip chip , 1996, 1996 IEEE MTT-S International Microwave Symposium Digest.

[5]  P.H. Siegel,et al.  A novel split-waveguide mount design for millimeter- and submillimeter-wave frequency multipliers and harmonic mixers , 1993, IEEE Microwave and Guided Wave Letters.

[6]  Masami Tokumitsu,et al.  Controllability of Novel Microbumps Using Interlaminated Tin and Gold Layers for Flip-Chip Interconnection , 2003 .

[7]  Viktor Krozer,et al.  Multifinger Indium Phosphide Double-Heterostructure Transistor Circuit Technology With Integrated Diamond Heat Sink Layer , 2016, IEEE Transactions on Electron Devices.

[8]  Hideaki Matsuzaki,et al.  Sub-Millimeter and Terahertz-Wave Packaging for Large Chip-Width MMICs , 2016, IEEE Microwave and Wireless Components Letters.

[9]  Patrick Reynaert,et al.  A Flip-Chip Packaging Design With Waveguide Output on Single-Layer Alumina Board for E-Band Applications , 2016, IEEE Transactions on Microwave Theory and Techniques.

[10]  J.A. Jargon,et al.  Multiline TRL revealed , 2002, 60th ARFTG Conference Digest, Fall 2002..

[11]  M. Tokumitsu,et al.  Controllability of novel Sn/sub 0.95/Au/sub 0.05/ microbumps using interlaminated tin and gold layers for flip-chip interconnection , 2003, IEEE Microwave and Wireless Components Letters.

[12]  W. Heinrich,et al.  Improved thermal management of InP transistors in transferred-substrate technology with diamond heat-spreading layer , 2015 .

[13]  Michael Hrobak,et al.  Process robustness and reproducibility of sub-mm wave flip-chip interconnect assembly , 2016 .

[14]  Duixian Liu,et al.  LTCC Packages With Embedded Phased-Array Antennas for 60 GHz Communications , 2011, IEEE Microwave and Wireless Components Letters.

[15]  Seong-Ook Park,et al.  Optoelectronic and microwave transmission characteristics of indium solder bumps for low-temperature flip-chip applications , 2006, IEEE Transactions on Advanced Packaging.

[16]  M. I. Schukfeh,et al.  Benzocyclobutene dry etch with minimized byproduct redeposition for application in an InP DHBT process , 2016 .

[17]  Sangsub Song,et al.  A Millimeter-Wave System-on-Package Technology Using a Thin-Film Substrate With a Flip-Chip Interconnection , 2009, IEEE Transactions on Advanced Packaging.

[18]  W. Heinrich,et al.  Flip-Chip Interconnects for 250 GHz Modules , 2015, IEEE Microwave and Wireless Components Letters.

[19]  W. Deal,et al.  First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process , 2015, IEEE Electron Device Letters.

[20]  A. Katz,et al.  Advanced metallization schemes for bonding of InP-based laser devices to CVD-diamond heatsinks , 1994 .

[21]  N. Weimann,et al.  Flip-Chip Approach for 500 GHz Broadband Interconnects , 2017, IEEE Transactions on Microwave Theory and Techniques.

[22]  R. Marks.  A multiline method of network analyzer calibration , 1991 .

[23]  Viktor Krozer,et al.  SciFab –a wafer‐level heterointegrated InP DHBT/SiGe BiCMOS foundry process for mm‐wave applications , 2016 .

[24]  M. Ruberto,et al.  A CMOS Bidirectional 32-Element Phased-Array Transceiver at 60 GHz With LTCC Antenna , 2012, IEEE Transactions on Microwave Theory and Techniques.

[25]  W. Heinrich,et al.  Theory and measurements of flip-chip interconnects for frequencies up to 100 GHz , 2001 .

[26]  Li-Han Hsu,et al.  Design of Flip-Chip Interconnect Using Epoxy-Based Underfill Up to $V$ -Band Frequencies With Excellent Reliability , 2010, IEEE Transactions on Microwave Theory and Techniques.

[27]  W. Heinrich,et al.  The flip-chip approach for millimeter wave packaging , 2005, IEEE Microwave Magazine.