Generation Current Reduction at Local Oxidation of Silicon Isolation Edge by Low-Temperature Hydrogen Annealing

The effect of low temperature hydrogen annealing (LTHA) in reducing the generation current at the local oxidation of silicon (LOCOS) isolation edge can be successfully investigated by C-t measurement of metal-oxide-semiconductor (MOS) capacitors with varying periphery-to-area ratio. The generation current, at the LOCOS isolation edge, can then be measured by the separation of the generated peripheral current and the surface and bulk current generated under the gate electrode. As a result, it becomes clear that the generation current is strongly reduced by annealing at a temperature below 400°C, but at 450°C the reduction is rather small.