RF power LDMOSFET on SOI

We have fabricated a SOI laterally diffused MOSFET that is designed for use in radio frequency power amplifiers for wireless system-on-a-chip applications. The device is fabricated on a thin-film SOI wafer using a process that is suitable for integration with SOI CMOS. An under-source body contact is implemented and both a high breakdown voltage and a high f/sub t/ are attained. The device performance compares favorably with bulk silicon rf power MOSFETs. For a gate length of 0.7 /spl mu/m the device f/sub t/ is 14 GHz, f/sub max/ is 18 GHz, and the breakdown voltage approaches 25 V.

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